SI3483CDV-T1-GE3
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SI3483CDV-T1-GE3 datasheet
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МаркировкаSI3483CDV-T1-GE3
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ПроизводительSiliconix
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ОписаниеVishay Intertechnology SI3483CDV-T1-GE3 Continuous Drain Current Id: -6.1A Current - Continuous Drain (id) @ 25?° C: 8A Drain Source Voltage Vds: -30V Drain To Source Voltage (vdss): 30V Fet Feature: Logic Level Gate Fet Type: MOSFET P-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 33nC @ 10V ID_COMPONENTS: 2662464 Input Capacitance (ciss) @ Vds: 1000pF @ 15V Mounting Type: Surface Mount On Resistance Rds(on): 27mohm Package / Case: 6-TSOP (0.063", 1.60mm Width) Power - Max: 4.2W Power Dissipation Pd: 2W Rds On (max) @ Id, Vgs: 34 mOhm @ 6.1A, 10V Rds(on) Test Voltage Vgs: -10V Series: TrenchFET?® Threshold Voltage Vgs Typ: -3V Transistor Polarity: P Channel Vgs(th) (max) @ Id: 3V @ 250?µA Other Names: SI3483CDV-T1-GE3TR
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Количество страниц11 шт.
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